2N3867 Datasheet, PDF (1/2 Pages) Microsemi Corporation – Silicon PNP Power Transistors

PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices
2N3867
2N3867S
2N3868
2N3868S
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = 25⁰C⁽¹⁾
@ TC = 25⁰C⁽²⁾
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71 mW/⁰C for TA > +25⁰C
2) Derate linearly 57.1 mW/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
TOP, TSTG
2N3867 2N3868
2N3867S 2N3868S
40
60
40
60
4.0
3.0
1.0
10
-55 to +200
Symbol
R_θJC
Max.
17.5
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I_C = 100 µAdc
2N3867, S
2N3868, S
V(BR)_CBO
Collector-Emitter Breakdown Voltage
I_C = 20 mAdc
2N3867, S
2N3868, S
V(BR)_CEO
Emitter-Base Breakdown Voltage
I_E = 100 µAdc
Collector-Emitter Cutoff Current
V(BR)_EBO
V_EB = 2.0 Vdc, V_CE = 40 Vdc
2N3867, S
I_CEX
V_EB = 2.0 Vdc, V_CE = 60 Vdc
2N3868, S
Collector-Base Cutoff Current
V_CB = 40 Vdc
V_CB = 60 Vdc
Emitter-Base Cutoff Current
V_EB = 4 Vdc
2N3867, S
I_CBO
2N3868, S
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Adc
W
W
0_C
Unit
0_C/W
Min.
40
60
40
60
4.0
TO-5*
2N3867, 2N3868
TO-39*
(TO-205AD)
2N3867S, 2N3868S
*See Appendix A for
Package Outline
Max.
Unit
Vdc
Vdc
Vdc
1.0
µAdc
1.0
100
µAdc
100
µAdc
120101
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