APTCV60TLM24T3G Datasheet, PDF (12/13 Pages) Microsemi Corporation – CoolMOS & Trench + Field Stop IGBT

APTCV60TLM24T3G
CR7 & CR8 Typical performance curve
Forward Current vs Forward Voltage
80
T_J=125°C
60
40
20
T_J=25°C
0
0.0
1.0
2.0
3.0
4.0
V_F, Anode to Cathode Voltage (V)
Energy losses vs Collector Current
2.5
2
1.5
1
0.5
0
0
V_CE = 800V
V_GE = 15V
R_G = 5Ω
T_J = 125°C
20
40
60
80
I_C (A)
Switching Energy Losses vs Gate Resistance
1.8
1.6
1.4
1.2
V_CE = 800V
1 V_GE =15V
I_C = 30A
0.8 T_J = 125°C
0.6
0
10
20
30
Gate resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.2
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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