APTCV60TLM24T3G Datasheet, PDF (10/13 Pages) Microsemi Corporation – CoolMOS & Trench + Field Stop IGBT

Delay Times vs Current
140
120
100
80
V_DS=400V
R_G=2.5Ω
60 ^TJ=125°C
L=100µH
40
20
td(off)
td(on)
0
0 20 40 60 80 100 120 140 160
I_D, Drain Current (A)
Switching Energy vs Current
4
V_DS=400V
R_G=2.5Ω
3 ^TJ^=125°C
E_on
L=100µH
2
E_off
1
0
0 20 40 60 80 100 120 140 160
I_D, Drain Current (A)
Operating Frequency vs Drain Current
300
V_DS=400V
250
D=50%
R_G=2.5ΩT
200
J^=125°C
T =75°C
150
100
hard
50
switching
0
10 20 30 40 50 60 70 80 90
I_D, Drain Current (A)
APTCV60TLM24T3G
Rise and Fall times vs Current
70
V_DS=400V
60 _RG=2.5Ω
50 ^TJ=125°C
t_f
L=100µH
40
30
t_r
20
10
0
0 20 40 60 80 100 120 140 160
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
5
V_DS=400V
4 ^ID=95A
E_off
T_J=125°C
L=100µH
3
E_on
2
1
0
0
5
10 15 20 25
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
T_J=150°C
100
T_J=25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, Source to Drain Voltage (V)
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