JANTX1N6075 Datasheet, PDF (1/3 Pages) Microsemi Corporation – VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS POWER RECTIFIERS

SCOTTSDALE DIVISION
1N6073 thru 1N6081
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
POWER RECTIFIERS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/503 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (T_L =70ºC) in
different package sizes for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I”
metallurgical bond. These devices are also available in surface mount MELF
package configurations by adding a “US” suffix (see separate data sheet for
1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
APPEARANCE
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N6073 to 1N6081 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available for 1N6074 and
1N6075 per MIL-PRF-19500/503
• Further options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or SP prefix respectively , e.g.
MX6076, MV6079, SP6081, etc.
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix
• Ultrafast recovery rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +155^oC
• Storage Temperature: -65^oC to +155^oC
• Peak Forward Surge Current @ 25^oC: 35 Amps for
1N6073-6075, 75 Amps for 1N6076-6078, and 175
Amps for 1N6079-6081 at 8.3 ms half-sine wave
• Average Rectified Forward Current (I_O) at T_L= +70^oC
(L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified Forward Current (I_O) at T_A=55^oC:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
• Thermal Resistance L= 0 inch (R_θJL): 13^oC/W for
1N6073-6075, 8.5^oC/W for 1N6076-6078, and
5.0^oC/W for 1N6079-6081
• Solder temperature: 260^oC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 1N6073 thru 1N6075: 340 mg
1N6076 thru 1N6078: 750 mg
1N6079 thru 1N6081: 1270 mg
• See package dimensions on last page
Copyright © 2007
10-03-2007 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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