JAN2N6547 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525
Devices
2N6546
2N6547
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6546 2N6547
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +25⁰C ⁽¹⁾
@ TC = +100⁰C ⁽¹⁾
Operating & Storage Temperature Range
V_CEO
V_CEX
V_EBO
I_B
I_C
P_T
Top, T_stg
300
400
600
850
8
10
15
175
100
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
R_θJC
1.0
1) Between TC = +25⁰C and TC = +200⁰C, linear derating factor (average) = 1.0 W/⁰C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
2N6546
2N6547
Collector-Emitter Cutoff Current
V_CE = 600 Vdc; VBE = 1.5 Vdc
2N6546
V_CE = 850 Vdc; VBE = 1.5 Vdc
Emitter-Base Cutoff Current
2N6547
V_EB = 8 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Symbol
V(BR)_CEO
I_CEX
I_EBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
TO-3 (TO-204AA)*
Unit
0_C/W
*See Appendix A for Package
Outline
Min. Max.
Unit
300
Vdc
400
1.0
mAdc
1.0
1.0
mAdc
120101
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