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| ARF1510 Datasheet, PDF (1/2 Pages) Advanced Power Technology – RF POWER MOSFET | |||
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D1
D3
ARF1510
RF POWER MOSFET
FULL-BRIDGE
G1
G3
D1
D3
S1D2
S3D4
G2
G4
G1
S1D2
G2
ARF1510
G3
S3D4
G4
S2
S4
S2
S4
400V 750W 40MHz
The ARF1510 is four RF power transistor arranged in an H-Bridge conï¬guration. It is intended for off-line 300V
operation in high power scientiï¬c, medical and, industrial RF power generator and ampliï¬er applications up to 40
MHz.
⢠Speciï¬ed 300 Volt, 27.12 MHz Characteristics:
â¢
Output Power = 750 Watts.
â¢
Gain = 17dB (Class D)
⢠High Performance Power RF Package.
⢠Very High Breakdown for Improved Ruggedness.
⢠Low Thermal Resistance.
⢠Nitride Passivated Die for Improved Reliability.
⢠RoHS Compliant
MAXIMUM RATINGS
Symbol
VDSS
ID
VGS
PD
TJ,TSTG
TL
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise speciï¬ed.
ARF 1510
UNIT
1000
Volts
8
Amps
±30
1500
Volts
Watts
-55 to 175
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
VDS(ON)
IDSS
IGSS
gfs
Visolation
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 3.25A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
MIN TYP MAX UNIT
1000
6.8
Volts
7.5
25
μA
250
±100 nA
3
4
mhos
TBD
Volts
3
5
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted)
RθJC
RθJHS
Junction to Case
Junction to Sink (Use High Efï¬ciency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.10
0.16
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
°C/W
Microsemi Website - http://www.microsemi.com
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