1N5186US Datasheet, PDF (1/2 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5186US thru 1N5190US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically
sealed with voidless-glass construction using an internal “Category I” metallurgical
bond. These devices are also available in military qualified axial-leaded packages
by deleting the “US” suffix. Microsemi also offers numerous other rectifier products
to meet higher and lower current ratings with various recovery time speed
requirements including fast and ultrafast device types in both through-hole and
surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Package “E”
or D-5B
FEATURES
APPLICATIONS / BENEFITS
• Surface mount equivalent to the popular JEDEC
registered 1N5186 to 1N5190 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 100 to 600 Volts.
• Further options in screening in accordance with MIL-
PRF-19500/424 for JAN, JANTX, and JANTXV by adding
a MQ, MX, or MV prefix respectively, e.g. MX1N5186US,
MV1N5187US, etc.
• Axial-leaded package equivalents also available (see
separate data sheet for 1N5186 thru 1N5190)
• Fast recovery 3 Amp rectifiers 100 to 600 V
• Military and other high-reliability applications
• General rectifier applications including bridges,
half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65^oC to +175^oC
• Thermal Resistance: 10^oC/W junction to end cap
• Thermal Impedance: 1.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 3.0 Amps @ T_A =
25ºC and 0.700 Amps at T_A = 150ºC
• Forward Surge Current: 80 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are solid silver with
Tin/Lead (Sn/Pb) finish
• MARKING: Cathode band only
• POLARITY: Cathode indicated by band
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 539 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
1N5186US
1N5187US
1N5188US
1N5189US
1N5190US
WORKING
PEAK
REVERSE
VOLTAGE
V_RWM
VOLTS
100V
200V
400V
500V
600V
MINIMUM
BREAKDOWN
VOLTAGE
V_BR @ 50µA
VOLTS
120V
240V
480V
550V
660V
FORWARD
VOLTAGE
V_F
@ 9A (pulsed)
MIN
MAX
VOLTS
VOLTS
0.9V
1.5V
MAXIMUM
REVERSE
CURRENT
I_R @ V_RWM
25^oC
100^oC
µA
µA
2.0
100
MAXIMUM
REVERSE
RECOVERY
TIME
t_rr
ns
150
200
250
300
400
AVERAGE
RECTIFIED
CURRENT AMPS
I_O
25^oC
150^oC
AMPS AMPS
3.0
0.7
3.0
0.7
3.0
0.7
3.0
0.7
3.0
0.7
Copyright  2004
12-10-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
Page 1