PC28F256P30TFA Datasheet, PDF (94/95 Pages) Micron Technology – Micron Parallel NOR Flash Embedded Memory (P30-65nm)

256Mb and 512Mb (256Mb/256Mb), P30-65nm
Program and Erase Characteristics
Program and Erase Characteristics
Table 47: Program and Erase Specifications
Number Symbol Parameter
Conventional Word Programming
W200
t_PROG/W
Program Single word
Time
Buffered Programming
W250
t_PROG
Program Aligned 32-Word, BP
Time
time (32 words)
Aligned 64-Wd, BP
time (64 words)
Aligned 128-Wd, BP
time (128 words)
Aligned 256-Wd, BP
time (256 words)
one full buffer, BP
time (512 words)
Buffered Enhanced Factory Programming
W451
t_BEFP/B
W452
t_BEFP/Setup
Erase and Suspend
Program
Single byte
BEFP Setup
W500
W501
W600
W601
W602
Blank Check
t_ERS/PB
t_ERS/MB
t_SUSP/P
t_SUSP/E
t_ERS/SUSP
Erase
Time
Suspend
Latency
32-KByte Parameter
128-KByte Main
Program suspend
Erase suspend
Erase to Suspend
W702
t_BC/MB
blank
check
Main Array Block
Min
-
-
-
-
-
-
n/a
n/a
-
-
-
-
-
-
V_PPL
V_PPH
Typ Max Min Typ Max
270 456 - 270 456
310 716 -
310 900 -
375 1140 -
505 1690 -
900 3016 -
310 716
310 900
375 1140
505 1690
900 3016
n/a n/a
-
0.5
-
n/a n/a 5
-
-
0.8 4.0
-
0.8 4.0
0.8 4.0
-
0.8 4.0
25 30
-
25 30
25 30
-
25 30
500 -
- 500 -
3.2
-
-
3.2
-
Unit
µs
µs
µs
s
µs
ms
Notes
1
1
1, 2
1
1
1, 3
Notes:
1. Typical values measured at T_C = +25 °C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes system overhead. Sampled, but not 100% tested.
2. Averaged over entire device.
3. W602 is the typical time between an initial block erase or erase resume command and
the a subsequent erase suspend command. Violating the specification repeatedly during
any particular block erase may cause erase failures.
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN
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