PC28F256P30TFA Datasheet, PDF (79/95 Pages) Micron Technology – Micron Parallel NOR Flash Embedded Memory (P30-65nm)

256Mb and 512Mb (256Mb/256Mb), P30-65nm
DC Voltage Characteristics
3. Sampled, not 100% tested.
4. I_CCES is specified with the device deselected. If device is read while in erase suspend, cur-
rent is I_CCES plus I_CCR.
5. I_CCW, I_CCE measured over typical or max times specified in Program and Erase Characteris-
tics (page 94) .
6. if V_IN > V_CC the input load current increases to 10uA max.
7. the I_PPS,I_PPWS,I_PPES Will increase to 200uA when Vpp/WP# is at V_PPH.
DC Voltage Characteristics
Table 42: DC Voltage Characteristics
CMOS Inputs (V_CCQ = TTL Inputs ⁽¹⁾ (V_CCQ =
1.7 V – 3.6 V)
2.4 V – 3.6 V)
Symbol Parameter
Min
Max
Min
Max Unit Test Conditions
Notes
V_IL Input Low Voltage
-0.5
0.4
-0.5
0.6
V
2
V_IH Input High Voltage
V_CCQ – 0.4 V_CCQ + 0.5
2
V_CCQ + 0.5 V
V_OL Output Low Voltage
-
0.2
-
0.2
V V_CC = V_CCMin V_CCQ =
-
V_CCQMin I_OL = 100 µA
V_OH Output High Voltage V_CCQ – 0.2
-
V_CCQ – 0.2
-
V V_CC = V_CCMin V_CCQ =
-
V_CCQMin I_OH = –100 µA
V_PPLK V_PP Lock-Out Voltage
-
0.4
-
0.4
V
3
V_LKO V_CC Lock Voltage
1.0
-
1.0
-
V
-
V_LKOQ V_CCQ Lock Voltage
0.9
-
0.9
-
V
-
V_PPL V_PP Voltage Supply
(Logic Level)
1.5
3.6
1.5
3.6
V
V_PPH Buffered Enhanced
8.5
9.5
8.5
9.5
V
Factory Programming
V_PP
Notes:
1. Synchronous read mode is not supported with TTL inputs.
2. V_IL can undershoot to –1.0 V for duration of 2ns or less and V_IH can overshoot to V_CCQ +
1.0 V for durations of 2ns or less.
3. V_PP ≤ V_PPLK inhibits erase and program operations. Do not use V_PPL and V_{PPH outside their}
valid ranges.
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN
79
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