M29W128GL7AN6F Datasheet, PDF (64/76 Pages) Micron Technology – Parallel NOR Flash Embedded Memory

128Mb 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 21: WE#-Controlled Program AC Timing (8-Bit Mode)
A[22:0]/A-1
CE#
3rd cycle 4th cycle
t_WC
AAAh
PA
t_AS
t_AH
t_CS
t_CH
Data polling
PA
READ cycle
t_WC
t_E
t_GHWL
t_OE
OE#
t_WP
t_WPH
WE#
t_DS
t_WHWH1
t_DF
t_OH
DQ[7:0]
AOh
PD
t_DH
DQ7# D_OUT
D_OUT
Notes:
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit and by a
READ operation that outputs the data (D_OUT) programmed by the previous PROGRAM
command.
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. A 7/13 EN
64
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