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MT46V64M4_1 Datasheet, PDF (63/93 Pages) Micron Technology – Double Data Rate (DDR) SDRAM
256Mb: x4, x8, x16 DDR SDRAM
Operations
Data from any READ burst may be truncated with a BURST TERMINATE command, as
shown in Figure 31 on page 66. The BURST TERMINATE latency is equal to the CL, that
is, the BURST TERMINATE command should be issued x cycles after the READ
command where x equals the number of desired data element pairs (pairs are required
by the 2n-prefetch architecture).
Data from any READ burst must be completed or truncated before a subsequent WRITE
command can be issued. If truncation is necessary, the BURST TERMINATE command
must be used, as shown in Figure 32 on page 67. The tDQSS (NOM) case is shown; the
tDQSS (MAX) case has a longer bus idle time. (tDQSS [MIN] and tDQSS [MAX] are
defined in the section on WRITEs.) A READ burst may be followed by, or truncated with,
a PRECHARGE command to the same bank provided that auto precharge was not acti-
vated.
The PRECHARGE command should be issued x cycles after the READ command, where
x equals the number of desired data element pairs (pairs are required by the 2n-prefetch
architecture). This is shown in Figure 33 on page 68. Following the PRECHARGE
command, a subsequent command to the same bank cannot be issued until both tRAS
and tRP have been met. Part of the row precharge time is hidden during the access of the
last data elements.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
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