MT4LC16M4G3 Datasheet, PDF (6/22 Pages) Micron Technology – DRAM

16 MEG x 4
EDO DRAM
ICC OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3, 5, 6) (VCC = +3.3V ±0.3V)
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = VIH)
STANDBY CURRENT: CMOS
(RAS# = CAS# VCC - 0.2V; DQs may be left open;
Other inputs: VIN VCC - 0.2V or VIN ≤ 0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling: ^tRC = ^tRC [MIN])
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS# = VIL, CAS#, address cycling: ^tPC = ^tPC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = VIH: ^tRC = ^tRC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling: ^tRC = ^tRC [MIN])
REFRESH CURRENT: Extended (“S” version only)
Average power supply current: CAS# = 0.2V or CBR cycling;
RAS# = ^tRAS (MIN); WE# = VCC - 0.2V; A0-A11, OE# and
DIN = VCC - 0.2V or 0.2V (DIN may be left open)
REFRESH CURRENT: Self (“S” version only)
Average power supply current: CBR with
RAS# ^tRASS (MIN) and CAS# held LOW;
WE# = VCC - 0.2V; A0-A11, OE# and DIN = VCC - 0.2V or 0.2V
(DIN may be left open)
4K
8K
SYMBOL SPEED REFRESH REFRESH UNITS NOTES
ICC1
ALL
1
1
mA
ICC2
ALL
500
500
µA
ICC3
-5
170
130 mA 25
-6
160
120
ICC4
-5
150
150 mA 25
-6
120
120
ICC5
-5
170
130 mA 22
-6
160
120
ICC6
-5
160
160 mA 4, 7
-6
150
150
ICC7
ALL
400
400
µA 4, 7
ICC8
ALL
400
400
µA 4, 7
16 Meg x 4 EDO DRAM
D22_2.p65 – Rev. 5/00
6
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©2000, Micron Technology, Inc.