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MT48H32M16LF Datasheet, PDF (53/73 Pages) Micron Technology – 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Timing Diagrams
Timing Diagrams
Figure 36: Initialize and Load Mode Register
((
CLK
))
((
))
((
CKE
))
((
))
((
COMMAND1
))
((
))
((
))
DQM
((
))
((
A0-A9, A11
))
((
))
T0
tCK
tCKS tCKH
tCMS tCMH
NOP
T1
Tn + 1
To + 1
Tp + 1
Tq + 1
Tr + 1
((
((
((
((
((
((
))
))
))
))
))
))
((
((
((
((
((
((
))
))
))
))
))
))
((
((
((
((
((
((
))
))
))
))
))
))
((
((
((
((
((
((
))
))
))
))
))
))
((
((
((
((
((
((
))
))
))
))
))
))
PRE
((
AR
((
AR
((
LMR
((
LMR
((
VALID ( (
))
))
))
))
))
))
((
((
((
((
((
((
))
))
))
))
))
))
((
((
((
((
((
((
))
))
))
))
))
))
tAS tAH
((
((
((
((
((
((
))
))
))
))
))
))
((
((
((
CODE
((
CODE
((
VALID
((
))
))
))
))
))
))
((
A10
))
((
))
((
))
BA0, BA1
((
))
ALL BANKS ( (
((
((
((
((
((
))
((
))
((
))
))
))
))
((
CODE
((
CODE
((
VALID
((
))
))
))
))
))
))
tAS tAH
tAS tAH
((
((
((
((
((
((
))
((
))
((
) ) BA0 = L, ) ) BBAA00==LL,, ) )
((
BA1 = L ( (
BBAA11==HL ( (
))
VALID
((
))
))
))
))
))
))
((
DQ
))
High-Z
T = 100µs
Power-up:
VDD and
CLK stable
((
))
tRP
Precharge
all banks
((
))
tRFC2
((
((
((
((
))
))
))
))
tRFC2
tMRD3
tMRD3
Load Mode Load Extended
Register Mode Register
DON’T CARE
Notes:
1. PRE = PRECHARGE command, AR = AUTO REFRESH command, LMR = LOAD MODE REGISTER
command.
2. Only NOPs or COMMAND INHIBITs may be issued during tRFC time.
3. At least one NOP or COMMAND INHIBIT is required during tMRD time.
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
53
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