MT28F128J3 Datasheet, PDF (46/52 Pages) Micron Technology – Q-FLASHTM MEMORY

128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
BLOCK ERASE, PROGRAM, AND LOCK BIT CONFIGURATION PERFORMANCE
(Notes: 1, 2, 3); Commercial Temperature (0ºC ≤ T_A ≤ +85ºC), Extended Temperature (-40ºC ≤ T_A ≤ +85ºC)
CHARACTERISTICS
PARAMETER
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
Byte/Word Program Time (Using WORD/BYTE PROGRAM Command)
Block Program Time (Using WRITE-to-BUFFER Command)
Block Erase Time
Set Lock Bits Time
Clear Block Lock Bits Time
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
SYMBOL
t_WED1
t_WED2
t_WED3
t_WED4
t_WED5
t_WED6
t_LPS
t_LES
-11/-12/-15
TYP
MAX⁸
150
654
14
630
0.6
1.7
0.75
5
64
75
0.5
0.7
25
30
26
35
UNITS NOTES
µs
4, 5, 6, 7
µs
4
sec
4
sec
4
µs
4
sec
5
µs
µs
NOTE:
1. Typical values measured at T_A = +25ºC and nominal voltages. Assumes corresponding lock bits are not set. Subject to
change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled, but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time is 4.7µs/byte (typical).
7. Effective per-word program time is 9.4µs/word (typical).
8. MAX values are measured at worst-case temperature and VCC corner after 100,000 cycles.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
46
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©2002, Micron Technology, Inc.