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| MT47H64M16HR-25H Datasheet, PDF (43/132 Pages) Micron Technology – DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks | |||
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ODT DC Electrical Characteristics
1Gb: x4, x8, x16 DDR2 SDRAM
ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to VSS
Parameter
RTT effective impedance value for 75Ë setting
EMR (A6, A2) = 0, 1
RTT effective impedance value for 150Ë setting
EMR (A6, A2) = 1, 0
RTT effective impedance value for 50Ë setting
EMR (A6, A2) = 1, 1
Deviation of VM with respect to VDDQ/2
Symbol
RTT1(EFF)
Min Nom Max Units
60
75
90
Ë
Notes
1, 2
RTT2(EFF)
120 150
180
Ë
1, 2
RTT3(EFF)
40
50
60
Ë
1, 2
ËVM
â6
â
6
%
3
Notes: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL(DC) to the ball
being tested, and then measuring current, I(VIH[AC]), and I(VIL[AC]), respectively.
2. Minimum IT and AT device values are derated by six percent less when the devices oper-
ate between â40°C and 0°C (TC ).
3. Measure voltage (VM) at tested ball with no load.
PDF: 09005aef821ae8bf
1GbDDR2.pdf â Rev. X 10/11 EN
43
Micron Technology, Inc. reserves the right to change products or specifications without notice.
 2007 Micron Technology, Inc. All rights reserved.
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