MT47H16M16BG-3ITB Datasheet, PDF (40/129 Pages) Micron Technology – 256Mb: x4, x8, x16 DDR2 SDRAM

ODT DC Electrical Characteristics
256Mb: x4, x8, x16 DDR2 SDRAM
ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to V_SS
Parameter
R_TT effective impedance value for 75˖ setting
EMR (A6, A2) = 0, 1
R_TT effective impedance value for 150˖ setting
EMR (A6, A2) = 1, 0
R_TT effective impedance value for 50˖ setting
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V_DDQ/2
Symbol
R_TT1(EFF)
Min Nom Max Units
60
75
90
˖
Notes
1, 2
R_TT2(EFF)
120 150
180
˖
1, 2
R_TT3(EFF)
40
50
60
˖
1, 2
˂VM
–6
–
6
%
3
Notes: 1. R_TT1(EFF) and R_TT2(EFF) are determined by separately applying V_IH(AC) and V_IL(DC) to the ball
being tested, and then measuring current, I(V_IH[AC]), and I(V_IL[AC]), respectively.
2. Minimum IT and AT device values are derated by six percent less when the devices oper-
ate between –40°C and 0°C (T_C ).
3. Measure voltage (VM) at tested ball with no load.
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. N 7/11 EN
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