MT48LC32M4A2 Datasheet, PDF (33/59 Pages) Micron Technology – SYNCHRONOUS DRAM

128Mb: x4, x8, x16
SDRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD/VDDQ Supply
Relative to VSS ........................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS ........................................ -1V to +4.6V
Operating Temperature,
T_A (commercial) ........................................ 0°C to +70°C
Operating Temperature,
T_A (extended; IT parts) ......................... -40°C to +85°C
Storage Temperature (plastic) ................ -55°C to +150°C
Power Dissipation .......................................................... 1W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 36; VDD/VDDQ = +3.3V ±0.3V)
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V ≤ VOUT ≤ VDDQ
Output Levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
SYMBOL
VDD/VDDQ
VIH
VIL
MIN
3
2
-0.3
MAX UNITS NOTES
3.6
V
VDD + 0.3 V
22
0.8
V
22
II
-5
5
µA
IOZ
-5
5
µA
VOH
2.4
–
V
VOL
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 36; VDD/VDDQ = +3.3V ±0.3V)
MAX
PARAMETER/CONDITION
SYMBOL -7E -75 -8E
Operating Current: Active Mode;
Burst = 2; READ or WRITE; ^tRC = ^tRC (MIN)
IDD1 160 150 140
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
IDD2
2
2
2
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after ^tRCD met;
No accesses in progress
IDD3
50 50 40
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
Auto Refresh Current
t_{RFC =} t_{RFC (MIN)}
CKE = HIGH; CS# = HIGH
t_{RFC = 15.625µs}
IDD4 165 150 140
IDD5 330 310 270
IDD6
3
3
3
UNITS NOTES
mA 3, 18,
19, 32
mA 32
mA 3, 12,
19, 32
mA 3, 18,
19, 32
mA 3, 12,
mA ^{18, 19,}
32, 33
Self Refresh Current:
CKE ≤ 0.2V
Standard
Low power (L)
IDD7
2 2 2 mA
4
IDD7
1
1
1
mA
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65 – Rev. E; Pub. 1/02
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.