M25P16-VMF3TPB Datasheet, PDF (28/50 Pages) Micron Technology – Micron M25P80 Serial Flash Embedded Memory

Micron M25P80 Serial Flash Embedded Memory
SECTOR ERASE
SECTOR ERASE
The SECTOR ERASE command sets to 1 (FFh) all bits inside the chosen sector. Before
the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have
been executed previously. After the WRITE ENABLE command has been decoded, the
device sets the write enable latch (WEL) bit.
The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by
the command code, and three address bytes on serial data input (DQ0). Any address in-
side the sector is a valid address for the SECTOR ERASE command. S# must be driven
LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.
Otherwise the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is t_SE. While the
SECTOR ERASE cycle is in progress, the status register may be read to check the value of
the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE
cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is
completed, the WEL bit is reset.
A SECTOR ERASE command is not executed if it applies to a sector that is hardware or
software protected.
Figure 16: SECTOR ERASE Command Sequence
0
C
DQ0
Command
MSB
7
8
LSB
A[MAX]
Note: 1. Cx = 7 + (A[MAX] + 1).
C_x
A[MIN]
PDF: 09005aef84566560
m25p80.pdf - Rev. G 1/13 EN
28
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