MT28F008B5 Datasheet, PDF (25/30 Pages) Micron Technology – FLASH MEMORY

V_IH
A0–A18/(A19)
V_IL
V_IH
CE#
V_IL
V_IH
OE#
V_IL
V_IH
WE# _VIL
DQ0–DQ7/ ^VIH
DQ0–DQ15 ² _VIL
V_HH
V_IH
RP# ³ _VIL
V_IH
WP# ³ _VIL
V_PPH1
VPP
V_IL
8Mb
SMART 5 BOOT BLOCK FLASH MEMORY
WRITE/ERASE CYCLE
WE#-CONTROLLED WRITE/ERASE
Note 1
tAS
tAH
AIN
tAS
tAH
tCS
tWP
tDS
tRS
tCH
tWC
tWPH
tWED1/2/3/4
CMD
in
tWB
tDH
tDH
tDS
CMD/
Data-in
tRHS
[Unlock boot block]
Status
(SR7=0)
Status
(SR7=1)
tRHH
CMD
in
WRITE SETUP or
ERASE SETUP input
[Unlock boot block]
tVPS1
[5V VPP]
tVPH
WRITE or ERASE (block)
address asserted, and
WRITE data or ERASE
CONFIRM issued
WRITE or ERASE
executed, status register
checked for completion
Command for next
operation issued
DON’T CARE
TIMING PARAMETERS
Commercial Temperature (0ºC ≤ T_A ≤ +70ºC)
Extended Temperature (-40ºC ≤ T_A≤ +85ºC)
SYMBOL
t_WC
t_WPH
t_WP
t_AS
t_AH
t_DS
t_DH
t_CS
t_CH
t_VPS1
-8/-8 ET
MIN
MAX
80
30
50
50
0
50
0
0
0
200
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
t_RS
t_RHS
t_WED1
t_WED2
t_WED3
t_WED4
t_WB
t_VPH
t_RHH
-8/-8 ET
MIN
MAX
1,000
100
4.5
100
100
500
200
0
0
UNITS
ns
ns
µs
ms
ms
ms
ns
ns
ns
Notes: 1. Address inputs are “Don’t Care” but must be held stable.
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit.
3. Either RP# at VHH or WP# HIGH unlocks the boot block.
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
25Micron Technology, Inc. Reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.