MT41K256M16HA-125ITE Datasheet, PDF (23/27 Pages) Micron Technology – 4Gb: x4, x8, x16 1.35V DDR3L SDRAM

4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications
Table 24: Minimum Required Time ^tVAC Above V_IH(AC) (Below V_IL[AC]) for Valid ADD/CMD Transition
Slew Rate (V/ns)
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
<0.5
DDR3L-800/1066/1333/1600
DDR3L-1866
t_{VAC at 160mV (ps)} t_{VAC at 135mV (ps)} t_{VAC at 135mV (ps)} t_{VAC at 125mV (ps)}
70
209
200
205
53
198
200
205
47
194
178
184
35
186
133
143
31
184
118
129
26
181
99
111
20
177
75
89
12
171
43
59
Note 1
164
Note 1
18
Note 1
164
Note 1
18
Note: 1. Rising input signal shall become equal to or greater than V_IH(AC) level and Falling input
signal shall become equal to or less than V_IL(AC) level.
Table 25: Derating Values for ^tDS/^tDH – AC160/DC90-Based
DQ Slew
Rate V/ns
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Δ^tDS, Δ^tDH Derating (ps) – AC/DC-Based
DQS, DQS# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Δ^tDS Δ^tDH Δ^tDS Δ^tDH Δ^tDS Δ^tDH Δ^tDS Δ^tDH Δ^tDS Δ^tDH Δ^tDS Δ^tDH Δ^tDS Δ^tDH Δ^tDS Δ^tDH
80 45 80 45 80 45
53 30 53 30 53 30 61 38
0
0
0
0
0
0
8
8 16 16
–1 –3 –1 –3 7
5 15 13 23 21
–3 –8 5
1 13 9 21 17 29 27
–3 –5 11 3 19 11 27 21 35 37
8 –4 16 4 24 14 32 30
4
6 12 4 20 20
–8 –11 0
5
PDF: 09005aef84780270
4Gb_DDR3L_SDRAM.pdf - Rev. H 4/13 EN
23
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