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MT41K256M16HA-125ITE Datasheet, PDF (1/27 Pages) Micron Technology – 4Gb: x4, x8, x16 1.35V DDR3L SDRAM | |||
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1.35V DDR3L SDRAM
MT41K1G4 â 128 Meg x 4 x 8 banks
MT41K512M8 â 64 Meg x 8 x 8 banks
MT41K256M16 â 32 Meg x 16 x 8 banks
4Gb: x4, x8, x16 DDR3L SDRAM
Description
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 SDRAM (1.5V).
Features
⢠VDD = VDDQ = 1.35V (1.283â1.45V)
⢠Backward compatible to VDD = VDDQ = 1.5V ±0.075V
â Supports DDR3L devices to be backward com-
patible in 1.5V applications
⢠Differential bidirectional data strobe
⢠8n-bit prefetch architecture
⢠Differential clock inputs (CK, CK#)
⢠8 internal banks
⢠Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
⢠Programmable CAS (READ) latency (CL)
⢠Programmable posted CAS additive latency (AL)
⢠Programmable CAS (WRITE) latency (CWL)
⢠Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
⢠Selectable BC4 or BL8 on-the-fly (OTF)
⢠Self refresh mode
⢠TC of 0°C to +95°C
â 64ms, 8192-cycle refresh at 0°C to +85°C
â 32ms at +85°C to +95°C
⢠Self refresh temperature (SRT)
⢠Automatic self refresh (ASR)
⢠Write leveling
⢠Multipurpose register
⢠Output driver calibration
Options
⢠Configuration
â 1 Gig x 4
â 512 Meg x 8
â 256 Meg x 16
⢠FBGA package (Pb-free) â x4, x8
â 78-ball (10.5mm x 12mm) Rev. D
â 78-ball (9mm x 10.5mm) Rev. E, J
⢠FBGA package (Pb-free) â x16
â 96-ball (10mm x 14mm) Rev. D
â 96-ball (9mm x 14mm) Rev. E
⢠Timing â cycle time
â 1.071ns @ CL = 13 (DDR3-1866)
â 1.25ns @ CL = 11 (DDR3-1600)
â 1.5ns @ CL = 9 (DDR3-1333)
â 1.87ns @ CL = 7 (DDR3-1066)
⢠Operating temperature
â Commercial (0°C ⤠TC ⤠+95°C)
â Industrial (â40°C ⤠TC ⤠+95°C)
⢠Revision
Marking
1G4
512M8
256M16
RA
RH
RE
HA
-107
-125
-15E
-187E
None
IT
:D/:E/:J
Table 1: Key Timing Parameters
Speed Grade
-1071, 2, 3
-1251, 2
-15E1
-187E
Data Rate (MT/s)
1866
1600
1333
1066
Target tRCD-tRP-CL
13-13-13
11-11-11
9-9-9
7-7-7
Notes:
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-107).
tRCD (ns)
13.91
13.75
13.5
13.1
tRP (ns)
13.91
13.75
13.5
13.1
CL (ns)
13.91
13.75
13.5
13.1
PDF: 09005aef84780270
4Gb_DDR3L_SDRAM.pdf - Rev. H 4/13 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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