MT28F004B5-1 Datasheet, PDF (20/32 Pages) Micron Technology – FLASH MEMORY

CAPACITANCE
(T_A = +25ºC; f = 1 MHz)
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
4Mb
SMART 5 BOOT BLOCK FLASH MEMORY
SYMBOL
CI
CO
MAX
9
12
UNITS
pF
pF
READ AND STANDBY CURRENT DRAIN
(Note: 1) Commercial Temperature (0ºC £ T_A £ +70ºC) and Extended Temperature (-40ºC £ T_A £ +85ºC)
PARAMETER/CONDITION
READ CURRENT: WORD-WIDE, TTL INPUT LEVELS
(CE# = VIL; OE# = VIH; f = 10 MHz; Other inputs = VIL or VIH;
RP# = VIH)
READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS
(CE# £ 0.2V; OE# ³ VCC - 0.2V; f = 10 MHz; Other inputs £ 0.2V or ³ VCC
- 0.2V; RP# ³ VCC - 0.2V)
READ CURRENT: BYTE-WIDE, TTL INPUT LEVELS
(CE# = VIL; OE# = VIH; f = 10 MHz; Other inputs = VIL or VIH;
RP# = VIH)
READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS
(CE# £ 0.2V; OE# ³ VCC - 0.2V; f = 10 MHz; Other inputs £ 0.2V or ³ VCC
- 0.2V; RP# = VCC - 0.2V)
STANDBY CURRENT: TTL INPUT LEVELS
VCC power supply standby current (CE# = RP# = VIH;
Other inputs = VIL or VIH)
STANDBY CURRENT: CMOS INPUT LEVELS
VCC power supply standby current (CE# = RP# = VCC - 0.2V)
DEEP POWER-DOWN CURRENT: VCC SUPPLY (RP# = VSS ±0.2V)
STANDBY OR READ CURRENT: VPP SUPPLY (VPP £ 5.5V)
DEEP POWER-DOWN CURRENT: VPP SUPPLY (RP# = VSS ±0.2V)
SYMBOL
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC8
IPP1
IPP2
MAX
55
50
55
50
2
130
20
±15
5
UNITS
mA
NOTES
2, 3
mA
2, 3
mA
2, 3
mA
2, 3
mA
µA
µA
µA
µA
Notes: 1. Vcc = MAX during Icc tests.
2. Icc is dependent on cycle rates.
3. Icc is dependent on output loading. Specified values are obtained with the outputs open.
4Mb Smart 5 Boot Block Flash Memory
MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
20
©2002, Micron Technology Inc.