MT28F004B5-1 Datasheet, PDF (1/32 Pages) Micron Technology – FLASH MEMORY

FLASH MEMORY
4Mb
SMART 5 BOOT BLOCK FLASH MEMORY
MT28F004B5
MT28F400B5
5V Only, Dual Supply (Smart 5)
0.18µm Process Technology
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 5 technology (B5):
5V ±10% VCC
5V ±10% VPP application/production
programming¹
• Advanced 0.18µm CMOS floating-gate process
• Compatible with 0.3µm Smart 5 device
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B5, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B5, 512K x 8)
• TSOP and SOP packaging options
OPTIONS
MARKING
• Timing
80ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
MT28F400B5
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type I
MT28F004B5
Plastic 40-pin TSOP Type I
-8
MT28F004B5
MT28F400B5
T
B
None
ET
SG²
WG
VG
Notes:
1. This generation of devices does not support 12V VPP
compatibility production programming; however, 5V
VPP application production programming can be used
with no loss of performance.
2. Contact factory for availability.
Part Number Example:
MT28F400B5WG-8 T
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP²
GENERAL DESCRIPTION
The MT28F004B5 (x8) and MT28F400B5 (x16, x8)
are nonvolatile, electrically block-erasable (Flash),
programmable, read-only memories containing
4,194,304 bits organized as 262,144 words (16 bits) or
524,288 bytes (8 bits). Writing or erasing the device is
done with a 5V VPP voltage, while all operations are
performed with a 5V VCC. Due to process technology
advances, 5V VPP is optimal for application and pro-
duction programming. These devices are fabricated
with Micron’s advanced 0.18µm CMOS floating-gate
process.
The MT28F004B5 and MT28F400B5 are organized
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure
or overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to
store code implemented in low-level system recovery.
The remaining blocks vary in density and are written
and erased with no additional security measures.
Please refer to Micron’s Web site (www.micron.com/
flash) for the latest data sheet.
4Mb Smart 5 Boot Block Flash Memory
MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
1
©2002, Micron Technology Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.