MT8KTF51264AZ Datasheet, PDF (2/18 Pages) Micron Technology – 1.35V DDR3L SDRAM UDIMM

1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
1GB
8K
16K A[13:0]
8 BA[2:0]
1Gb (128 Meg x 8)
1K A[9:0]
1 S0#
2GB
8K
32K A[14:0]
8 BA[2:0]
2Gb (256 Meg x 8)
1K A[9:0]
1 S0#
4GB
8K
64K A[15:0]
8 BA[2:0]
4Gb (512 Meg x 8)
1K A[9:0]
1 S0#
Table 3: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT41K128M8,¹ 1Gb DDR3L SDRAM
Part Number²
Module
Density
Configuration
MT8KTF12864AZ-1G6__
1GB
128 Meg x 64
MT8KTF12864AZ-1G4__
1GB
128 Meg x 64
Module
Bandwidth
12.8 GB/s
10.6 GB/s
Memory Clock/
Data Rate
1.25ns/1600 MT/s
1.5ns/1333 MT/s
Clock Cycles
(CL-^tRCD-^tRP)
11-11-11
9-9-9
Table 4: Part Numbers and Timing Parameters – 2GB Modules
Base device: MT41K256M8,¹ 2Gb DDR3L SDRAM
Part Number²
Module
Density
Configuration
MT8KTF25664AZ-1G6__
2GB
256 Meg x 64
MT8KTF25664AZ-1G4__
2GB
256 Meg x 64
Module
Bandwidth
12.8 GB/s
10.6 GB/s
Memory Clock/
Data Rate
1.25ns/1600 MT/s
1.5ns/1333 MT/s
Clock Cycles
(CL-^tRCD-^tRP)
11-11-11
9-9-9
Table 5: Part Numbers and Timing Parameters – 4GB Modules
Base device: MT41K512M8,¹ 4Gb DDR3L SDRAM
Part Number²
Module
Density
Configuration
MT8KTF51264AZ-1G9__
4GB
512 Meg x 64
MT8KTF51264AZ-1G6__
4GB
512 Meg x 64
Module
Bandwidth
14.9 GB/s
12.8 GB/s
Memory Clock/
Data Rate
1.07ns/1866 MT/s
1.25ns/1600 MT/s
Clock Cycles
(CL-^tRCD-^tRP)
13-13-13
11-11-11
Notes: 1. Data sheets for the base device parts can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT8KTF51264AZ-1G9P1.
PDF: 09005aef8413b5fe
ktf8c128_256_512x64az.pdf – Rev. K 9/15 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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