MT8KTF51264AZ Datasheet, PDF (14/18 Pages) Micron Technology – 1.35V DDR3L SDRAM UDIMM

1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM
I_DD Specifications
Table 15: DDR3 I_DD Specifications and Conditions – 4GB (Die Revision N)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8)
component data sheet
Parameter
Symbol
1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T_C = 85°C
Self refresh temperature current (SRT-enabled): MAX T_C = 95°C
All banks interleaved read current
Reset current
I_DD0
I_DD1
I_DD2P0
I_DD2P1
I_DD2Q
I_DD2N
I_DD2NT
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5B
I_DD6
I_DD6ET
I_DD7
I_DD8
392
376
mA
512
488
mA
64
64
mA
128
112
mA
208
192
mA
208
192
mA
240
224
mA
224
208
mA
256
240
mA
840
760
mA
840
760
mA
1440 1400 mA
96
96
mA
128
128
mA
1120 1040 mA
80
80
mA
PDF: 09005aef8413b5fe
ktf8c128_256_512x64az.pdf – Rev. K 9/15 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.