MT18VDDT12872AG Datasheet, PDF (18/29 Pages) Micron Technology – DDR SDRAM UNBUFFERED DIMM

256MB, 512MB, 1GB (x72, ECC, DR), PC3200
184-PIN DDR SDRAM UDIMM
Table 16: DDR SDRAM Component Electrical Characteristics and
Recommended AC Operating Conditions (Continued)
Notes: 1–5, 8, 12–15, 29, 31; notes appear on pages 19–21; 0°C ≤ T_A ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V
AC CHARACTERISTICS
PARAMETER
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to VDD
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
256MB
512MB,
1GB
256MB
512MB,
1GB
SYMBOL
t_RRD
t_WPRE
t_WPRES
t_WPST
t_WR
t_WTR
na
t_REFC
t_REFI
t_VTD
t_XSNR
t_XSRD
-40B
MIN
10
MAX
0.25
0
0.4
0.6
15
2
t_{QH -}t_DQSQ
140.6
70.3
15.6
7.8
0
75
200
UNITS
ns
t_CK
ns
t_CK
ns
t_CK
ns
µs
µs
µs
µs
ns
ns
t_CK
NOTES
18, 19
17
22
21
21
pdf: 09005aef80814e61, source: 09005aef80a43eed
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN
18
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©2004 Micron Technology, Inc.