MT4LC4M4E8 Datasheet, PDF (17/23 Pages) Micron Technology – 4 MEG x 4 EDO DRAM

TECHNOLOGY, INC.
4 MEG x 4
EDO DRAM
EDO-PAGE-MODE READ EARLY WRITE CYCLE
(Pseudo READ-MODIFY-WRITE)
t _RASP
t _RP
RAS#
V _IH
V _IL
tCRP
t _CSH
t _RCD
tPC
t _CAS
tPC
t _CP
t _CAS
t _CP
t _RSH
t _CAS
t _CP
CAS#
V
V
IH
IL
,,,,,, _{,,, ,,,, ,,, ADDR}
V
V
IH
IL
, ^{, , WE#}
V
V
IH
IL
, _DQ
V _IOH
V _IOL
,,,,,,,,, _{,,, OE#}
V _IH
V _IL
tASR
tRAD
t _RAH
ROW
tAR
t _ASC
t _CAH
COLUMN (A)
t _RCS
tAA
tRAC
tCAC
OPEN
tOE
t _ASC t _CAH
t _ASC
t _ACH
t _CAH
COLUMN (B)
t _RCH
COLUMN (N)
t _WCS
t _WCH
tCPA
tAA
tCAC
tCOH
VALID DATA (A)
t _WHZ
VALID
DATA (B)
t _DS t _DH
VALID DATA
IN
ROW
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL
t_AA
t_ACH
t_AR
t_ASC
t_ASR
t_CAC
t_CAH
t_CAS
t_COH
t_CP
t_CPA
t_CRP
t_CSH
t_DH
t_DS
-5
MIN
MAX
25
12
38
0
0
13
8
8
10,000
3
8
28
5
38
8
0
-6
MIN
MAX
30
15
45
0
0
15
10
10
10,000
3
10
35
5
45
10
0
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
t_OE
t_PC
t_RAC
t_RAD
t_RAH
t_RASP
t_RCD
t_RCH
t_RCS
t_RP
t_RSH
t_WCH
t_WCS
t_WHZ
-5
MIN
MAX
12
20
50
9
9
50
125,000
11
0
0
30
13
8
0
0
12
-6
MIN
MAX
15
25
60
12
10
60
125,000
14
0
0
40
15
10
0
0
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4 Meg x 4 EDO DRAM
D47.pm5 – Rev. 3/97
17
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1997, Micron Technology, Inc.