MT58L1MY18D Datasheet, PDF (16/34 Pages) Micron Technology – 16Mb SYNCBURST™ SRAM

ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1, unless otherwise noted)(0ºC £ T_A £ +70ºC)
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
CONDITIONS
SYMBOL TYP
Device selected; All inputs £ VIL
or ³ VIH; Cycle time ³ ^tKC (MIN);
VDD = MAX; Outputs open
IDD
225
Device selected; VDD = MAX;
ADSC#, ADSP#, GW#, BWx#, ADV# ³
IDD1
55
VIH; All inputs £ VSS + 0.2 or ³ VDD - 0.2;
Cycle time ³ ^tKC (MIN)
Device deselected; VDD = MAX;
All inputs £ VSS + 0.2 or ³ VDD - 0.2;
ISB2
0.4
All inputs static; CLK frequency = 0
Device deselected; VDD = MAX;
All inputs £ VIL or ³ VIH;
ISB3
8
All inputs static; CLK frequency = 0
Device deselected; VDD = MAX;
ADSC#, ADSP#, GW#, BWx#, ADV# ³
ISB4
55
VIH; All inputs £ VSS + 0.2 or ³ VDD - 0.2;
Cycle time ³ ^tKC (MIN)
MAX
-6 -7.5 -10 UNITS NOTES
475 425 325 mA 2, 3, 4
110 100 85 mA 2, 3, 4
10
10
10 mA 3, 4
25
25
25 mA 3, 4
110 90
85 mA 3, 4
NOTE: 1. If VDD = +3.3V, then VDDQ = +3.3V or +2.5V. If VDD = +2.5V, then VDDQ = +2.5V.
Voltage tolerances: +3.3V ±0.165 or +2.5V ±0.125V for all values of VDD and VDDQ.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25ºC, and 10ns cycle time.
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.