MT4LC4M4B1 Datasheet, PDF (1/20 Pages) Micron Technology – DRAM

DRAM
4 MEG x 4
FPM DRAM
MT4LC4M4B1, MT4C4M4B1
MT4LC4M4A1, MT4C4M4A1
For the latest data sheet, please refer to the Micron Web
site: www.micronsemi.com/mti/msp/html/datasheet.html
FEATURES
• Industry-standard x4 pinout, timing, functions,
and packages
• High-performance, low-power CMOS silicon-gate
process
• Single power supply (+3.3V ±0.3V or +5V ±0.5V)
• All inputs, outputs and clocks are TTL-compatible
• Refresh modes: RAS#-ONLY, HIDDEN and CAS#-
BEFORE-RAS# (CBR)
• Optional self refresh (S) for low-power data
retention
• 11 row, 11 column addresses (2K refresh) or
12 row, 10 column addresses (4K refresh)
• FAST-PAGE-MODE (FPM) access
• 5V tolerant inputs and I/Os on 3.3V devices
OPTIONS
• Voltage
3.3V
5V
• Refresh Addressing
2,048 (2K) rows
4,096 (4K) rows
• Packages
Plastic SOJ (300 mil)
Plastic TSOP (300 mil)
• Timing
50ns access
60ns access
• Refresh Rates
Standard Refresh
Self Refresh (128ms period)
MARKING
LC
C
B1
A1
DJ
TG
-5
-6
None
S*
NOTE: 1. The 4 Meg x 4 FPM DRAM base number differenti-
ates the offerings in one place—MT4LC4M4B1. The
fifth field distinguishes various options: B1
designates a 2K refresh and A1 designates a 4K
refresh for FPM DRAMs.
2. The # symbol indicates signal is active LOW.
*Contact factory for availability
Part Number Example:
MT4LC4M4B1DJ
KEY TIMING PARAMETERS
SPEED
-5
-6
t_RC
84ns
110ns
t_RAC
50ns
60ns
t_PC
20ns
35ns
t_AA
25ns
30ns
t_CAC
13ns
15ns
t_RP
30ns
40ns
PIN ASSIGNMENT (Top View)
24/26-Pin SOJ
24/26-Pin TSOP
VCC 1
DQ0 2
DQ1 3
WE# 4
RAS# 5
**NC/A11 6
A10 8
A0 9
A1 10
A2 11
A3 12
VCC 13
26 VSS
VCC 1
25 DQ3
DQ0 2
24 DQ2
DQ1 3
WE# 4
23 CAS# _{RAS# 5}
22 OE# _{**NC/A11 6}
21 A9
A10 8
19 A8
18 A7
17 A6
16 A5
15 A4
A0 9
A1 10
A2 11
A3 12
VCC 13
14 VSS
26 VSS
25 DQ3
24 DQ2
23 CAS#
22 OE#
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
**NC on 2K refresh and A11 on 4K refresh options.
4 MEG x 4 FPM DRAM PART NUMBERS
PART NUMBER
REFRESH
VCC ADDRESSING PACKAGE REFRESH
MT4LC4M4B1DJ-6 3.3V
2K
SOJ Standard
MT4LC4M4B1DJ-6 S 3.3V
2K
SOJ
Self
MT4LC4M4B1TG-6 3.3V
2K
TSOP Standard
MT4LC4M4B1TG-6 S 3.3V
2K
TSOP
Self
MT4LC4M4A1DJ-6 3.3V
4K
SOJ Standard
MT4LC4M4A1DJ-6 S 3.3V
4K
SOJ
Self
MT4LC4M4A1TG-6 3.3V
4K
TSOP Standard
MT4C4M4A1TG-6S 3.3V
4K
TSOP
Self
MT4C4M4B1DJ-6 5V
2K
SOJ Standard
MT4C4M4B1DJ-6 S 5V
2K
SOJ
Self
MT4C4M4B1TG-6 5V
2K
TSOP Standard
MT4C4M4B1TG-6S 5V
2K
TSOP
Self
MT4C4M4A1DJ-6 5V
4K
SOJ Standard
MT4C4M4A1DJ-6 S 5V
4K
SOJ
Self
MT4C4M4A1TG-6 5V
4K
TSOP Standard
MT4C4M4A1TG-6S 5V
4K
TSOP
Self
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.