MT28F321P20 Datasheet, PDF (1/35 Pages) Micron Technology – FLASH MEMORY

FLASH MEMORY
PRELIMINARY^‡
2 MEG x 16
PAGE FLASH MEMORY
MT28F321P20
MT28F321P18
Low Voltage, Extended Temperature
0.18µm Process Technology
FEATURES
• Flexible dual-bank architecture
Support for true concurrent operation with zero
latency
Read bank a during program bank b and vice
versa
Read bank a during erase bank b and vice versa
• Basic configuration:
Seventy-one erasable blocks
Bank a (4Mb for data storage)
Bank b (28Mb for program storage)
• VCC, VCCQ, VPP voltages*
1.70V (MIN), 1.90V (MAX) VCC, VCCQ
(MT28F321P18)
1.80V (MIN), 2.20V (MAX) VCC, VCCQ
(MT28F321P20)
0.9V (MIN) VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) VPP tolerant (factory
programming compatibility)
• Random access time: 70ns and 80ns @ 1.80V VCC*
• Page Mode read access*
Eight-word page
Interpage read access: 70ns/80ns @ 1.80V
Intrapage read access: 30ns @ 1.80V
• Low power consumption (VCC = 2.20V)
Asynchronous READ < 15mA
Standby < 50µA
Automatic power save (APS) feature
• Enhanced write and erase suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
• Dual 64-bit chip protection registers for security
purposes
• Cross-compatible command support
Extended command set
Common flash interface
• PROGRAM/ERASE cycle
100,000 WRITE/ERASE cycles per block
* Data based on MT28F321P20 device.
BALL ASSIGNMENT
48-Ball FBGA
1
2
3
4
5
6
7
8
A A13 A11
A8
VPP
WP# A19
A7
A4
B A14 A10 WE# RST# A18 A17
A5
A2
C A15 A12
A9
NC
A20
A6
A3
A1
D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE#
A0
E VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0
VSS
F VSS
DQ7 DQ13 DQ4
VCC DQ10 DQ1 OE#
Top View
(Ball Down)
NOTE: See page 7 for Ball Description Table.
See page 33 for mechanical drawing.
OPTIONS
• Timing
70ns access
80ns access
90ns access
• Boot Block Configuration
Top
Bottom
• Package
48-ball FBGA (6 x 8 ball grid)
• Operating Temperature Range
Extended (-40ºC to +85ºC)
MARKING
-70
-80
-90
T
B
FG
ET
Part Number Example:
MT28F321P20FG-70 TET
2 Meg x 16 Page Flash Memory
MT28F321P20_3.p65 – Rev. 3, Pub. 7/02
1
©2002, Micron Technology, Inc.
‡_{PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE}
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S
PRODUCTION DATA SHEET SPECIFICATIONS.