MT28F016S5 Datasheet, PDF (1/24 Pages) Micron Technology – 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

ADVANCE
2 MEG x 8
SMART 5 EVEN-SECTORED FLASH MEMORY
FLASH MEMORY
MT28F016S5
FEATURES
• Thirty-two 64KB erase blocks
• Deep Power-Down Mode:
10µA MAX
• Smart 5 technology:
5V ±10% VCC
5V ±10% VPP application/production
programming
12V VPP tolerant compatibility production
programming
• Address access time: 90ns
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
OPTIONS
• Timing
90ns access
MARKING
-9
• Package
Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG
Part Number Example:
MT28F016S5VG-9
5V Only, Dual Supply (Smart 5)
PIN ASSIGNMENT (Top View)
40-Pin TSOP Type I
A19
1
A18
2
A17
3
A16
4
A15
5
A14
6
A13
7
A12
8
CE#
9
VCC
10
VPP
11
RP#
12
A11
13
A10
14
A9
15
A8
16
A7
17
A6
18
A5
19
A4
20
40
A20
39
NC
38
WE#
37
OE#
36
RY/BY#
35
DQ7
34
DQ6
33
DQ5
32
DQ4
31
VCC
30
VSS
29
VSS
28
DQ3
27
DQ2
26
DQ1
25
DQ0
24
A0
23
A1
22
A2
21
A3
GENERAL DESCRIPTION
The MT28F016S5 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 2,097,152 bytes (8 bits). Writing or erasing the
device is done with a 5V VPP voltage, while all opera-
tions are performed with a 5V VCC. Due to process
technology advances, 5V VPP is optimal for application
and production programming. For backward compat-
ibility with SmartVoltage technology, 12V VPP is sup-
ported for a maximum of 100 cycles and may be
connected for up to 100 cumulative hours. The device
is fabricated with Micron’s advanced CMOS floating-
gate process.
The MT28F016S5 is organized into 32 separately
erasable blocks. ERASEs may be interrupted to allow
other operations with the ERASE SUSPEND command.
After the ERASE SUSPEND command is issued, READ
operations may be executed.
Operations are executed with commands from an
industry-standard command set. In addition to status
register polling, the MT28F016S5 provides a ready/
busy# (RY/BY#) output to indicate WRITE and ERASE
completion.
Please refer to Micron’s Web site (www.micron.com/
flash/htmls/datasheets.html) for the latest data sheet.
2 Meg x 8 Smart 5 Even-Sectored Flash Memory
F42.p65 – Rev. 1/00
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.