MT28F004B5 Datasheet, PDF (1/32 Pages) Micron Technology – FLASH MEMORY

FLASH MEMORY
4Mb
SMART 5 BOOT BLOCK FLASH MEMORY
MT28F004B5
MT28F400B5
5V Only, Dual Supply (Smart 5)
0.3µm Process Technology
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 5 technology (B5):
5V ±10% VCC
5V ±10% VPP application/production
programming
12V ±5% VPP compatibility production
programming
• Address access times: 60ns, 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B5, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B5, 512K x 8)
• TSOP and SOP packaging options
OPTIONS
• Timing
60ns access
80ns access
80ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFH)
Bottom (00000H)
• Operating Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
• Packages
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type 1
(12mm x 20mm)
Plastic 40-pin TSOP
(10mm x 20mm)
MARKING
-6
-8
-8 ET
MT28F004B5
MT28F400B5
T
B
None
ET
SG
WG
VG
Part Number Example:
MT28F400B5SG-8 T
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
GENERAL DESCRIPTION
The MT28F004B5 (x8) and MT28F400B5 (x16, x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable, read-only memories containing 4,194,304
bits organized as 262,144 words (16 bits) or 524,288
bytes (8 bits). Writing or erasing the device is done with
a 5V VPP voltage, while all operations are performed
with a 5V VCC. Due to process technology advances, 5V
VPP is optimal for application and production program-
ming. For backward compatibility with SmartVoltage
technology, 12V VPP is supported for a maximum of 100
cycles and may be connected for up to 100 cumulative
hours. These devices are fabricated with Micron’s ad-
vanced CMOS floating-gate process.
The MT28F004B5 and MT28F400B5 are organized
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Please refer to Micron’s Web site (www.micron.com/
flash/htmls/datasheets.html)p for the latest data sheet.
4Mb Smart 5 Boot Block Flash Memory
F44_B.p65 – Rev. 7/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.