MT18VDDF6472DG Datasheet, PDF (1/31 Pages) Micron Technology – DDR SDRAM REGISTERED DIMM

DDR SDRAM
REGISTERED DIMM
512MB, 1GB (x72, ECC, SR) PC3200
184-PIN DDR SDRAM RDIMM
MT18VDDF6472 – 512MB
MT18VDDF12872 – 1GB
For the latest data sheet, please refer to the Micron^ Web
site: www.micron.com/products/modules
Features
• 184-pin, dual in-line memory module (DIMM)
• Fast data transfer rates: PC3200
• Utilizes 400 MT/s DDR SDRAM components
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Supports ECC error detection and correction
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• VDD = VDDQ = +2.6V
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received
with data—i.e., source-synchronous data capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh modes
• 7.8125µs maximum average periodic refresh
interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Figure 1: 184-Pin DIMM (MO-206)
Low-Profile 1.125in. (28.58mm)
Very Low Profile 0.72in. (18.29mm)
OPTIONS
• Operating Temperature Range
Commercial (0°C ≤ T_A ≤ +70°C)
• Package
184-pin DIMM (standard)
184-pin DIMM (lead-free)¹
• Memory Clock, Speed, CAS Latency²
5ns (200 MHz), 400 MT/s, CL = 3
• PCB
1.125in (28.58mm)
MARKING
none
G
Y
-40B
NOTE: 1. Contact Micron for availability of products.
2. CL = CAS latency; registered Mode adds one
clock cycle to CL.
Table 1: Address Table
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (64 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
1GB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (128 Meg x 4)
4K (A0–A9, A11, A12)
1 (S0#)
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
1
©2004 Micron Technology, Inc. All rights reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.