MT16HTF6464AY Datasheet, PDF (1/21 Pages) Micron Technology – DDR2 SDRAM Unbuffered DIMM

512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Features
DDR2 SDRAM Unbuffered DIMM
MT16HTF6464A – 512MB
MT16HTF12864A – 1GB
MT16HTF25664A – 2GB
For component specifications, refer to the Micron’s Web site: www.micron.com/ddr2
Features
• 240-pin, unbuffered, dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200, PC2-
5300, or PC2-6400
• 512MB (64 Meg x 64), 1GB (128 Meg x 64), and 2GB
(256 Meg x 64)
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 ^tCK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Figure 1: 240-Pin DIMM (MO-237 R/C “B”)
PCB height: 29.97mm (1.18in)
Options
• Package
240-pin DIMM (lead-free)
• Frequency/CL¹
2.5ns @ CL = 5 (DDR2-800)²
3.0ns @ CL = 5 (DDR2-667)³
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
• PCB height
29.97mm (1.18in)
Marking
Y
-80E
-667
-53E
-40E
Notes: 1. CL = CAS (READ) latency.
2. Not available in 512MB density.
3. Not available in 2GB density.
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.