|
JS28F256P33BFE Datasheet, PDF (1/90 Pages) Micron Technology – NumonyxTM StrataFlash Embedded Memory | |||
|
NumonyxTM StrataFlash® Embedded Memory
(P33-65nm)
256-Mbit, 512-Mbit (256M/256M)
Datasheet
Product Features
 High performance:
 Security:
â 95ns initial access time for Easy BGA
â One-Time Programmable Registers:
â 105ns initial access time for TSOP
â 25ns 16-word asynchronous-page read
mode
â 52MHz with zero wait states, 17ns clock-to-
data output synchronous-burst read mode
â 64 unique factory device identifier bits
â 2112 user-programmable OTP bits
â Absolute write protection: VPP = VSS
â Power-transition erase/program lockout
â Individual zero-latency block locking
â 4-, 8-, 16-, and continuous-word options
for burst mode
â Individual block lock-down capability
â Password Access feature
â Buffered Enhanced Factory Programming at
2.0MByte/s (typ) using 512-word buffer
 Software:
â 3.0V buffered programming at 1.5MByte/s
(Typ) using 512-word buffer
â 20µs (Typ) program suspend
â 20µs (Typ) erase suspend
 Architecture:
â Multi-Level Cell Technology: Highest
Density at Lowest Cost
â Asymmetrically-blocked architecture
â Numonyx⢠Flash Data Integrator optimized
â Basic Command Set and Extended Function
Interface Command Set compatible
â Common Flash Interface capable
â Four 32-KByte parameter blocks: top or
bottom configuration
â 128-KByte main blocks
â Blank Check to verify an erase block
 Density and Packaging
â 56-Lead TSOP package (256-Mbit only)
â 64-Ball Easy BGA package (256, 512-Mbit)
â 16-bit wide data bus
 Voltage and Power:
â VCC (core) voltage: 2.3 V â 3.6 V
â VCCQ (I/O) voltage: 2.3 V â 3.6 V
â Standby current: 65uA (Typ) for 256-Mbit
â Continuous synchronous read current: 21
mA (Typ)/24 mA (Max) at 52 MHz
 Quality and Reliability
â Operating temperature: â40 °C to +85 °C
â Minimum 100,000 erase cycles per block
â 65nm ETOX⢠X process technology
Datasheet
1
Aug 2009
Order Number: 320003-08
|
▷ |