PIC12C509A-04I Datasheet, PDF (80/113 Pages) Microchip Technology – 8-Pin, 8-Bit CMOS Microcontrollers

PIC12C5XX
13.1 DC CHARACTERISTICS:
PIC12C508A/509A (Commercial, Industrial, Extended)
PIC12CE518/519 (Commercial, Industrial, Extended)
PIC12CR509A (Commercial, Industrial, Extended)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0°C ≤ TA ≤ +70°C (commercial)
–40°C ≤ TA ≤ +85°C (industrial)
–40°C ≤ TA ≤ +125°C (extended)
Parm
No.
Characteristic
Sym Min _Typ⁽¹⁾ Max Units
Conditions
D001 Supply Voltage
VDD 3.0
5.5
V FOSC = DC to 4 MHz (Commercial/
Industrial, Extended)
D002 RAM Data Retention
VDR
1.5*
Voltage⁽²⁾
V Device in SLEEP mode
D003 VDD Start Voltage to ensure VPOR
VSS
Power-on Reset
V See section on Power-on Reset for details
D004 VDD Rise Rate to ensure
Power-on Reset
SVDD 0.05*
V/ms See section on Power-on Reset for details
D010 _{Supply Current}(3)
D010C
D010A
D020 _{Power-Down Current} (5)
D021
D021B
IDD — 0.8 1.4 mA XT and EXTRC options (Note 4)
FOSC = 4 MHz, VDD = 5.5V
— 0.8 1.4 mA INTRC Option
FOSC = 4 MHz, VDD = 5.5V
—
19
27
µA LP OPTION, Commercial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
—
19
35
µA LP OPTION, Industrial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
—
30
55
µA LP OPTION, Extended Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
IPD
— 0.25
4
— 0.25 5
—
2
12
µA VDD = 3.0V, Commercial WDT disabled
µA VDD = 3.0V, Industrial WDT disabled
µA VDD = 3.0V, Extended WDT disabled
D022 _{Power-Down Current}
Supply Current ⁽³⁾
During read/write to
EEPROM peripheral
∆IWDT —
2.2
5
µA VDD = 3.0V, Commercial
— 2.2
6
µA VDD = 3.0V, Industrial
—
4
11
µA VDD = 3.0V, Extended
∆IEE — 0.1 0.2 mA FOSC = 4 MHz, Vdd = 5.5V,
SCL = 400kHz
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guid-
ance only and is not tested.
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on the
current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: IR = VDD/2Rext (mA) with Rext in kOhm.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is mea-
sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
DS40139E-page 80
© 1999 Microchip Technology Inc.