TC426 Datasheet, PDF (8/16 Pages) TelCom Semiconductor, Inc – 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC426/TC427/TC428
4.0 TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Rise and Fall Times vs.
Supply Voltage
70
C_L = 1000pF
60
T_A = +25°C
50
Delay Times vs. Supply Voltage
90
C_L = 1000pF
80
T_A = +25°C
t_D2
70
Rise and Fall Times vs.
Temperature
40
C_L = 1000pF
t_R
35 V_DD = 18V
30
40
60
25
30
t_R
50
t_F
20
20
t_F
40
t_D1
15
10
30
10
0
5
10
15
20
0
5
0
10
15
20
-25 0 25 50 75 100 125 150
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Delay Times vs. Temperature
100
C_L = 1000pF
t_D2
90 VDD = 18V
80
70
60
50
t_D1
40
30
-25
0 25 50 75 100 125 150
TEMPERATURE (°C)
Supply Current vs.
Capacitive Load
80
T_A = +25°C
70 _{VDD = 18V}
400kHz
60
50
40
200kHz
30
20
10
0
10
20kHz
100
1000
10K
CAPACITIVE LOAD (pF)
Rise and Fall Times vs.
Capacitive Load
1K
T_A = +25°C
V_DD = 18V
t_R
100
t_F
10
1
10
100
1000
10K
CAPACITIVE LOAD (pF)
Supply Current vs. Frequency
30
T_A = +25°C
C_L = 1000pF
V_DD = 18V
20
10V
10
5V
High Output vs. Voltage
2.20
T_A = +25°C
1.76
1.32
V_DD = 8V
13V
0.88
18V
0.44
Low Output vs. Voltage
1.20
T_A = +25°C
V_DD = 5V
0.96
0.72
10V
0.48
15V
0.24
0
1
10
100
1000
0 10 20 30 40 50 60 70 80 90 100
0 10 20 30 40 50 60 70 80 90 100
FREQUENCY (kHz)
CURRENT SOURCED (mA)
CURRENT SUNK (mA)
DS21415B-page 8
 2002 Microchip Technology Inc.