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TC426 Datasheet, PDF (3/16 Pages) TelCom Semiconductor, Inc – 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
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TC426/TC427/TC428
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage..................................................... +20V
Input Voltage, Any Terminal
................................... VDD + 0.3V to GND – 0.3V
Power Dissipation (TA ≤ 70°C)
PDIP ........................................................ 730mW
CERDIP ................................................... 800mW
SOIC........................................................ 470mW
Derating Factor
PDIP ....................................................... 8mW/°C
CERDIP ............................................... 6.4mW/°C
SOIC....................................................... 4mW/°C
Operating Temperature Range
C Version .........................................0°C to +70°C
I Version....................................... -25°C to +85°C
E Version ..................................... -40°C to +85°C
M Version................................... -55°C to +125°C
Storage Temperature Range ............. -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Input
VIH
VIL
IIN
Output
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
VOH
High Output Voltage
VOL
Low Output Voltage
ROH
High Output Resistance
ROL
Low Output Resistance
IPK
Peak Output Current
Switching Time (Note 1)
tR
Rise Time
tF
Fall Time
tD1
Delay Time
tD2
Delay Time
Power Supply
IS
Power Supply Current
Note 1: Switching times ensured by design.
2.4
—
—
—
-1
—
VDD – 0.025
—
—
—
—
10
—
6
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
1
—
0.025
15
10
—
30
30
50
75
8
0.4
V
V
µA
V
V
Ω
Ω
A
nsec
nsec
nsec
nsec
mA
Test Conditions
0V ≤ VIN ≤ VDD
IOUT = 10mA, VDD = 18V
IOUT = 10mA, VDD = 18V
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
 2002 Microchip Technology Inc.
DS21415B-page 3
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