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TC1413 Datasheet, PDF (8/14 Pages) TelCom Semiconductor, Inc – 3A HIGH-SPEED MOSFET DRIVERS
TC1413/TC1413N
TYPICAL CHARACTERISTICS (CONTINUED)
70
60
50
40
30
20
10
4
Rise Time vs. Supply Voltage
CLOAD = 1800pF
TA = 85°C
TA = 25°C
TA = -40°C
6
8
10
12
14
16
VDD (V)
Fall Time vs. Supply Voltage
70
CLOAD = 1800pF
60
50
40
TA = 85°C
30
TA = 25°C
20
TA = -40°C
10
4
6
8
10
12
14
16
VDD (V)
TD1 Propagation Delay vs. Supply Voltage
110
CLOAD = 1800pF
100
90
80
TA = 85°C
70
60
TA = 25°C
50
40
30
TA = -40°C
20
4
6
8
10
12
14
16
VDD (V)
TD2 Propagation Delay vs. Supply Voltage
100
CLOAD = 1800pF
90
80
70
TA = 85°C
60
TA = 25°C
50
40
30
TA = -40°C
20
4
6
8
10
12
14
16
VDD (V)
Rise and Fall Times vs. Capacitive Load
40
TA = 25°C
VDD = 16V
TRISE
30
TFALL
20
10
0
0
1000
2000
3000
4000
5000
CLOAD (pF)
Propagation Delays vs. Capacitive Load
35
TA = 25°C
34 VDD = 16V
TD2
33
TD1
32
31
30
29
28
0
1000
2000
3000
CLOAD (pF)
4000
5000
DS21392B-page 8
 2002 Microchip Technology Inc.