English
Language : 

TC1413 Datasheet, PDF (3/14 Pages) TelCom Semiconductor, Inc – 3A HIGH-SPEED MOSFET DRIVERS
◁
TC1413/TC1413N
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage..................................................... +20V
Input Voltage...................... VDD + 0.3V to GND – 5.0V
Power Dissipation (TA ≤ 70°C)
PDIP ........................................................ 730mW
SOIC........................................................ 470mW
Package Thermal Resistance
PDIP RθJ-A..............................................125°C/W
PDIP RθJ-C............................................... 42°C/W
SOIC RθJ-A ............................................ 155°C/W
SOIC RθJ-C .............................................. 45°C/W
Operating Temperature Range
C Version .........................................0°C to +70°C
E Version ..................................... -40°C to +85°C
Storage Temperature Range ............. -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1413/TC1413N ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless otherwise noted. Typical values are
measured at TA = +25°C, VDD = 16V.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
VIH
Logic 1, High Input Voltage
2.0
—
VIL
Logic 0, Low Input Voltage
—
—
IIN
Input Current
-1
—
-10
—
Output
VOH
High Output Voltage
VOL
Low Output Voltage
RO
Output Resistance
VDD – 0.025
—
—
—
—
2.7
3.3
3.3
IPK
Peak Output Current
—
2.0
IREV
Latch-Up Protection
—
0.5
Withstand Reverse Current
—
0.8
1
10
—
0.025
4
5
5
—
—
V
V
µA 0V ≤ VIN ≤ VDD, TA = +25°C
-40°C ≤ TA ≤ +85°C
V DC Test
V DC Test
Ω
VDD = 16V, IO = 10mA, TA = +25°C,
0°C ≤ TA ≤ +70°C
-40°C ≤ TA ≤ +85°C
A
VDD = 16V
A Duty cycle ≤ 2%, t ≤ 300µsec,
VDD = 16V
 2002 Microchip Technology Inc.
DS21392B-page 3
 ▷