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TC1411 Datasheet, PDF (8/14 Pages) TelCom Semiconductor, Inc – 1A HIGH-SPEED MOSFET DRIVERS
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TC1411/TC1411N
TYPICAL CHARACTERISTICS (CONTINUED)
Rise Time vs. Supply Voltage
100
CLOAD = 1000pF
80
TA = 85°C
60
TA = 25°C
40
20
TA = -40°C
0
4
6
8
10
12
14
16
VDD (V)
Fall Time vs. Supply Voltage
100 CLOAD = 1000pF
80
60
TA = 85°C
40
TA = 25°C
20
TA = -40°C
0
4
6
8
10
12
14
16
VDD (V)
TD1 Propagation Delay vs. Supply Voltage
100
CLOAD = 1000pF
80
60
TA = 85°C
TA = 25°C
40
TA = -40°C
20
0
4
6
8
10
12
14
16
VDD (V)
TD2 Propagation Delay vs. Supply Voltage
100
CLOAD = 1000pF
80
60
TA = 85°C
TA = 25°C
40
TA = -40°C
20
0
4
6
8
10
12
14
16
VDD (V)
Rise and Fall Times vs. Capacitive Load
100
TA = 25°C
VDD = 16V
80
TRISE
60
40
TFALL
20
0
0
500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
Propagation Delays vs. Capacitive Load
36
TA = 25°C
VDD = 16V
34
TD2
32
30
TD1
28
26
0
500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
DS21390B-page 8
 2002 Microchip Technology Inc.
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