TC1411 Datasheet, PDF (7/14 Pages) TelCom Semiconductor, Inc – 1A HIGH-SPEED MOSFET DRIVERS

TC1411/TC1411N
4.0 TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Quiescent Supply Current
vs. Supply Voltage
500
T_A = 25°C
400
V_IN = 3V
300
200
100
V_IN = 0V
04
6
8
10
12
14
16
V_DD (V)
Quiescent Supply Current
vs. Temperature
500
V_IN = 3V
400
V_SUPPLY = 16V
300
200
100 V_IN = 0V
0
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
Input Threshold vs. Supply Voltage
1.6 _{TA = 25°C}
1.5
V_IH
1.4
1.3
1.2
V_IL
1.1
4
6
8
10
12
14
16
V_DD (V)
Input Threshold vs. Temperature
1.6
V_SUPPLY = 16V
1.5
V_IH
1.4
1.3
1.2
V_IL
1.1
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
High-State Output Resistance
25
20
T_A = 85°C
T_A = 25°C
15
10
T_A = -40°C
5
04
6
8
10
12
14
16
V_DD (V)
Low-State Output Resistance
25
20
15
T_A = 85°C
T_A = 25°C
10
5
T_A = -40°C
04
6
8
10
12
14
16
V_DD (V)
 2002 Microchip Technology Inc.
DS21390B-page 7