PIC16C56-RCI Datasheet, PDF (71/194 Pages) Microchip Technology – EPROM/ROM-Based 8-bit CMOS Microcontroller Series

PIC16C5X
12.2 DC Characteristics: PIC16C54/55/56/57-RCI, XTI, 10I, HSI, LPI (Industrial)
PIC16C54/55/56/57-RCI, XTI, 10I, HSI, LPI
(Industrial)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +85°C for industrial
Param
No.
Symbol
Characteristic/Device
Min Typ† Max Units
Conditions
D001 VDD Supply Voltage
PIC16C5X-RCI
PIC16C5X-XTI
3.0
—
6.25 V
3.0
—
6.25 V
PIC16C5X-10I
PIC16C5X-HSI
4.5
—
5.5
V
4.5
—
5.5
V
PIC16C5X-LPI
2.5
—
6.25 V
D002 VDR RAM Data Retention Voltage⁽¹⁾ —
1.5*
—
V Device in SLEEP mode
D003
VPOR VDD Start Voltage to ensure
Power-on Reset
—
VSS
—
V See Section 5.1 for details on
Power-on Reset
D004
D010
D020
SVDD
IDD
VDD Rise Rate to ensure
Power-on Reset
Supply Current⁽²⁾
PIC16C5X-RCI⁽³⁾
PIC16C5X-XTI
PIC16C5X-10I
PIC16C5X-HSI
PIC16C5X-HSI
PIC16C5X-LPI
IPD Power-down Current⁽²⁾
0.05* —
—
1.8
—
1.8
—
4.8
—
4.8
—
9.0
—
15
—
4.0
—
0.6
— V/ms See Section 5.1 for details on
Power-on Reset
3.3 mA FOSC = 4 MHz, VDD = 5.5V
3.3 mA FOSC = 4 MHz, VDD = 5.5V
10 mA FOSC = 10 MHz, VDD = 5.5V
10 mA FOSC = 10 MHz, VDD = 5.5V
20 mA FOSC = 20 MHz, VDD = 5.5V
40
µA FOSC = 32 kHz, VDD = 3.0V,
WDT disabled
14
µA VDD = 3.0V, WDT enabled
12
µA VDD = 3.0V, WDT disabled
* These parameters are characterized but not tested.
† Data in “Typ” column is based on characterization results at 25°C. This data is for design guidance only and is
not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tristated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT
enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in SLEEP
mode. The power-down current in SLEEP mode does not depend on the oscillator type.
3: Does not include current through REXT. The current through the resistor can be estimated by the formula:
IR = VDD/2REXT (mA) with REXT in kΩ.
© 2002 Microchip Technology Inc.
Preliminary
DS30453D-page 69