PIC16C56-RCI Datasheet, PDF (108/194 Pages) Microchip Technology – EPROM/ROM-Based 8-bit CMOS Microcontroller Series

PIC16C5X
15.2 DC Characteristics: PIC16C54A-04E, 10E, 20E (Extended)
PIC16LC54A-04E (Extended)
PIC16LC54A-04E
(Extended)
PIC16C54A-04E, 10E, 20E
(Extended)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C for extended
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C for extended
Param
No.
Symbol
Characteristic
Min Typ† Max Units
Conditions
VDD Supply Voltage
D001
PIC16LC54A 3.0
2.5
— 6.25 V XT and RC modes
— 6.25 V LP mode
D001A
D002
PIC16C54A 3.5
4.5
VDR RAM Data Retention Voltage⁽¹⁾ —
— 5.5
— 5.5
1.5* —
V RC and XT modes
V HS mode
V Device in SLEEP mode
D003
VPOR VDD Start Voltage to ensure
Power-on Reset
— Vss — V See Section 5.1 for details on
Power-on Reset
D004
SVDD
IDD
VDD Rise Rate to ensure
Power-on Reset
Supply Current⁽²⁾
0.05* —
— V/ms See Section 5.1 for details on
Power-on Reset
D010
PIC16LC54A —
—
—
—
0.5 25 mA FOSC = 4.0 MHz, VDD = 5.5V,
RC⁽³⁾ and XT modes
11 27 µA FOSC = 32 kHz, VDD = 2.5V,
LP mode, Commercial
11 35 µA FOSC = 32 kHz, VDD = 2.5V,
LP mode, Industrial
11 37 µA FOSC = 32 kHz, VDD = 2.5V,
LP mode, Extended
D010A
PIC16C54A —
—
—
1.8 3.3 mA FOSC = 4.0 MHz, VDD = 5.5V,
RC⁽³⁾ and XT modes
4.8 10 mA FOSC = 10 MHz, VDD = 5.5V,
HS mode
9.0 20 mA FOSC = 20 MHz, VDD = 5.5V,
HS mode
Legend: Rows with standard voltage device data only are shaded for improved readability.
* These parameters are characterized but not tested.
† Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guid-
ance only and is not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tristated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/
disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in SLEEP
mode. The power-down current in SLEEP mode does not depend on the oscillator type.
3: Does not include current through REXT. The current through the resistor can be estimated by the formula:
IR = VDD/2REXT (mA) with REXT in kΩ.
DS30453D-page 106
Preliminary
© 2002 Microchip Technology Inc.