93LC56AB Datasheet, PDF (7/12 Pages) Microchip Technology – 2K 2.5V Microwave Serial EEPROM

3.8 WRITE
The WRITE instruction is followed by 8 bits (93LC56A)
or 16 bits (93LC56B) of data which are written into the
specified address. After the last data bit is put on the DI
pin, the falling edge of CS initiates the self-timed auto-
erase and programming cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another instruc-
tion.
93LC56A/B
3.9 Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
The WRAL cycle is completely self-timed and com-
mences at the falling edge of the CS. Clocking of the
CLK pin is not necessary after the device has entered
the WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not require an ERAL instruction
but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
FIGURE 3-7: WRITE TIMING
TCSL
CS
CLK
DI
1
0
1
An ••• A0 Dx ••• D0
HIGH-Z
DO
FIGURE 3-8: WRAL TIMING
CS
CLK
TSV
BUSY
Twc
READY
TCZ
HIGH-Z
TCSL
DI
1
0
0
0
1
X ••• X Dx ••• D0
HIGH-Z
DO
Guaranteed at Vcc = 4.5V to +6.0V.
TSV
TCZ
BUSY
TWL
READY
HIGH-Z
© 1997 Microchip Technology Inc.
Preliminary
DS21208A-page 7