SST12LP17E Datasheet, PDF (6/15 Pages) Microchip Technology – 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Table 4: RF Characteristics at 25°C
Symbol
Parameter
Min.
Typ
Max.
F_L-U
Frequency range
G
Small signal gain
2412
2484
27
28
G_VAR1
G_VAR2
Gain variation over band (2412–2484 MHz)
Gain ripple over channel (20 MHz)
±0.5
0.2
2f, 3f, 4f, 5f Harmonics at 23 dBm, without external filters
-40
EVM @ 18 dBm output with 802.11g OFDM 54 Mbps
3
signal
EVM
EVM @ 17 dBm output with MCS7-40 MHz band-
2.5
width
P_OUT
Output Power to meet 802.11g OFDM 54 Mbps
spectrum mask
Output Power to meet 802.11b DSSS 1 Mbps
spectrum mask
20.5
21.5
21
22.5
Unit
MHz
dB
dB
dB
dBc
%
%
dBm
dBm
T4.2 75004
Table 5: Characteristics at 25°C for Bluetooth Applications
Symbol
F_L-U
G
ICC
Power
Parameter
Min.
Typ
Max.
Frequency range
2412
2484
Small signal gain (configured as shown in Figure 9 26
28
on page 10)
Small signal gain (V_REF = 3.0V with 1.5kΩ series
23
26
resistor)
DC current at 17 dBm CW (configured as shown in
100
Figure 9 on page 10)
DC current at 12 dBm CS (V_REF = 3.0V with 1.5kΩ
50
series resistor)
Meeting Bluetooth spectrum power density using 3
17
Mbps modulation (-20 dBm at 1.5 MHz and -40 dBm
at 2.5 MHz, 100 kHz RBW)
(configured as shown in Figure 9 on page 10)
Meeting Bluetooth spectrum power density using 3
12
Mbps modulation (-20 dBm at 1.5 MHz and -40 dBm
at 2.5 MHz, 100 kHz RBW)
(V_REF = 3.0V with 1.5kΩ series resistor)
Unit
MHz
dB
dB
mA
mA
dBm
dBm
T5.2 75004
©2014 Silicon Storage Technology, Inc.
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DS-70005004G 10/14