SST12LP17E Datasheet, PDF (1/15 Pages) Microchip Technology – 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module
based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli-
ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%
power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing
3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm.
This power amplifier requires no external RF matching, and only requires one exter-
nal DC-bias capacitor to meet the specified performance. It offers high-speed
power-up/-down control through a single reference voltage pin and includes a tem-
perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is
offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con-
tact USON package.
Features
• Input/Output ports internally matched to 50 and
DC decoupled
• High gain:
– Typically 28 dB gain across 2.4–2.5 GHz
• High linear output power:
– >24 dBm P1dB
- Single-tone measurement. Please refer to “Absolute
Maximum Stress Ratings” on page 5
– Meets 802.11g OFDM ACPR requirement up to 21.5
dBm
– 3% EVM up to 18 dBm for 54 Mbps 802.11g signal
– 2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz
– Meets 802.11b ACPR requirement up to 22.5 dBm
– Meets Bluetooth^® spectrum mask for 3 Mbps at 17 dBm
typical
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~28%/138 mA @ P_OUT = 21.5 dBm for 802.11g
– ~33%/155 mA @ P_OUT = 22.5 dBm for 802.11b
• Single-pin low I_REF power-up/down control
– I_REF <2 mA
• Low idle current
– ~60 mA I_CQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low shut-down current (~2 µA)
• Stable performance over temperature
– ~2 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C
• Excellent on-chip power detection
– >15 dB dynamic range, dB-wise linear
– VSWR insensitive, temperature stable
• Packages available
– 8-contact X2SON – 2mm x 2mm x 0.4mm
– 8-contact USON – 2mm x 2mm x 0.6mm
• Non-Pb (lead-free), RoHS compliant, and Halogen free
Applications
• WLAN (IEEE 802.11b/g/n)
• Bluetooth^®
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2014 Silicon Storage Technology, Inc.
www.microchip.com
DS-70005004G 10/14