DSPIC30F5011-30IPT Datasheet, PDF (55/229 Pages) Microchip Technology – High-Performance, 16-Bit Digital Signal Controllers

dsPIC30F6011/6012/6013/6014
6.6 Programming Operations
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. A programming operation is nominally 2 msec in
duration and the processor stalls (waits) until the oper-
ation is finished. Setting the WR bit (NVMCON<15>)
starts the operation, and the WR bit is automatically
cleared when the operation is finished.
6.6.1
PROGRAMMING ALGORITHM FOR
PROGRAM FLASH
The user can erase and program one row of program
Flash memory at a time. The general process is:
1. Read one row of program Flash (32 instruction
words) and store into data RAM as a data
“image”.
2. Update the data image with the desired new
data.
3. Erase program Flash row.
a) Setup NVMCON register for multi-word,
program Flash, erase, and set WREN bit.
b) Write address of row to be erased into
NVMADRU/NVMADR.
c) Write ‘55’ to NVMKEY.
d) Write ‘AA’ to NVMKEY.
e) Set the WR bit. This will begin erase cycle.
f) CPU will stall for the duration of the erase
cycle.
g) The WR bit is cleared when erase cycle
ends.
4. Write 32 instruction words of data from data
RAM “image” into the program Flash write
latches.
5. Program 32 instruction words into program
Flash.
a) Setup NVMCON register for multi-word,
program Flash, program, and set WREN
bit.
b) Write ‘55’ to NVMKEY.
c) Write ‘AA’ to NVMKEY.
d) Set the WR bit. This will begin program
cycle.
e) CPU will stall for duration of the program
cycle.
f) The WR bit is cleared by the hardware
when program cycle ends.
6. Repeat steps 1 through 5 as needed to program
desired amount of program Flash memory.
6.6.2
ERASING A ROW OF PROGRAM
MEMORY
Example 6-1 shows a code sequence that can be used
to erase a row (32 instructions) of program memory.
EXAMPLE 6-1: ERASING A ROW OF PROGRAM MEMORY
; Setup NVMCON for erase operation, multi word write
; program memory selected, and writes enabled
MOV
#0x4041,W0
;
MOV
W0_,NVMCON
; Init pointer to row to be ERASED
; Init NVMCON SFR
MOV
#tblpage(PROG_ADDR),W0
;
MOV
W0_,NVMADRU
MOV
#tbloffset(PROG_ADDR),W0
; Initialize PM Page Boundary SFR
; Intialize in-page EA[15:0] pointer
MOV
W0, NVMADR
; Initialize NVMADR SFR
DISI #5
; Block all interrupts with priority <7 for
; next 5 instructions
MOV
#0x55,W0
MOV
W0_,NVMKEY
MOV
#0xAA,W1
; Write the 0x55 key
;
MOV
BSET
W1_,NVMKEY
NVMCON,#WR
; Write the 0xAA key
; Start the erase sequence
NOP
; Insert two NOPs after the erase
NOP
; command is asserted
© 2006 Microchip Technology Inc.
DS70117F-page 53