MCP87055_12 Datasheet, PDF (5/16 Pages) Microchip Technology – High-Speed N-Channel Power MOSFET

Note: Unless otherwise indicated, T_A = +25°C.
1.7
I_D = 250 μA
1.5
1.3
1.1
0.9
0.7
-75 -50 -25 0 25 50 75 100 125 150 175
T_C - Case Temperature (°C)
FIGURE 2-7:
Gate-to-Source Threshold
Voltage vs. Temperature.
100
10
1
T_C = +125°C
0.1
T_C = +25°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source to Drain Voltage (V)
FIGURE 2-8:
Source-to-Drain Current vs.
Source-to-Drain Voltage.
1000
100
Operation in this range is
limited by RDS(on)
10
1 ms
10 ms
1
100 ms
1s
0.1
DC
R_θJA = 66 °C/W
Single Pulse
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
FIGURE 2-9:
Area.
Maximum Safe Operating
MCP87055
70
60
50
40
30
20
10
0
0
25
FIGURE 2-10:
Temperature.
V_GS = 10V
V_GS = 4.5V
50
75 100 125 150
T_C - Case Temperature (˚C)
Maximum Drain Current vs.
1
0.1
0.01
0.001
0.001
FIGURE 2-11:
Impedance.
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse
0.1
10
t₁ - Pulse Duration (s)
Transient Thermal
1000
100
10
T_C = +25°C
T_C = +150°C
1
0.01
0.1
1
10
100
t_AV - Avalanche Time (ms)
FIGURE 2-12:
Single-Pulse Unclamped
Inductive Switching.
 2012 Microchip Technology Inc.
DS22323B-page 5