MCP87055_12 Datasheet, PDF (1/16 Pages) Microchip Technology – High-Speed N-Channel Power MOSFET

MCP87055
High-Speed N-Channel Power MOSFET
Features
• Low Drain-to-Source On Resistance (R_DS(ON))
• Low Total Gate Charge (Q_G) and Gate-to-Drain
Charge (Q_GD)
• Low Series Gate Resistance (R_G)
• Fast Switching
• Capable of Short Dead-Time Operation
• ROHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 3.3 x 3.3
Description
The MCP87055 device is an N-Channel power
MOSFET in a popular PDFN 3.3 mm x 3.3 mm
package. Advanced packaging and silicon processing
technologies allow the MCP87055 to achieve a low Q_G
for a given R_DS(on) value, resulting in a low Figure of
Merit (FOM). Combined with low R_G, the low Figure of
Merit of the MCP87055 allows high-efficiency power
conversion with reduced switching and conduction
losses.
S1
8D
S2
7D
S3
6D
G4
5D
Product Summary Table: Unless otherwise indicated, T_A = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BV_DSS
25
—
—
V V_GS = 0V, I_D = 250 µA
Gate-to-Source Threshold Voltage
V_GS(TH) 1.1 1.35 1.7
V V_DS = V_GS, I_D = 250 µA
Drain-to-Source On Resistance
Total Gate Charge
R_DS(ON) — 5.7
7
— 4.7 6
Q_G
— 11 14
mΩ V_GS = 4.5V, I_D = 20A
mΩ V_GS = 10V, I_D = 20A
nC V_DS = 12.5V, I_D = 20A, V_GS = 4.5V
Gate-to-Drain Charge
Q_GD
— 4.5 —
nC V_DS = 12.5V, I_D = 20A
Series Gate Resistance
R_G
— 2.1 —
Ω
Thermal Characteristics
Thermal Resistance Junction-to-X
R_θJX
— — 66 ˚C/W Note 1
Thermal Resistance Junction-to-Case
R_θJC
— — 3.4 ˚C/W Note 2
Note 1: R_θJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: R_θJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
 2012 Microchip Technology Inc.
DS22323B-page 1